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SSD40P04J Datasheet Preview

SSD40P04J Datasheet

P-Channel Enhancement Mode Power MOSFET

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Elektronische Bauelemente
SSD40P04J
-40A, -40V, RDS(ON) 14 m
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
SSD40P04J uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is well suited for high current load applications.
FEATURES
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
APPLICATIONS
Power switching applications
Hard switched and high frequency circuits
Uninterruptible power supply
MARKING
CJU40P04
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
TO-252(D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.90 J 2.336 REF.
B 4.95 5.50 K 0.89 REF.
C 2.10 2.50 M 0.50 1.14
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F 2.90 REF P 0.58 REF.
G 5.40 6.40
H 0.60 1.20
1
Gate
2
Drain
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy 1
Power Dissipation
Thermal Resistance from Junction to Ambient
VDS
VGS
ID
IDM
EAS
PD
RθJA
Lead Temperature for Soldering Purposes@ 1/8’’ from
case for 10s
TL
Junction and Storage Temperature Range
Notes:
1. EAS condition: VDD=20V, L=1mH, RG=25, Starting TJ=25°C
TJ, TSTG
3
Source
Rating
-40
±20
-40
-160
544
1.25
100
260
150, -55~150
Unit
V
V
A
A
mJ
W
°C / W
°C
°C
http://www.SeCoSGmbH.com/
13-Dec-2016 Rev.B
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SSD40P04J Datasheet Preview

SSD40P04J Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SSD40P04J
-40A, -40V, RDS(ON) 14 m
P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
-40
-
IDSS - -
IGSS - -
On Characteristics 1
-
-1
±100
Gate-Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
VGS(th)
-1.5 -1.85
RDS(ON)
-
12
gfs 34 -
Dynamic Characteristics
-3
14
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss - 2960
Coss
- 370
Crss - 310
Switching Characteristics
-
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Drain-Source Diode Forward Voltage 1
Qg - 72 -
Qgs - 14 -
Qgd - 15 -
Td(on) - 10 -
Tr - 18 -
Td(off) - 38 -
Tf - 24 -
Source-Drain Diode Characteristics
VSD - - -1.2
Continuous Drain-Source Diode
Forward Current 2
IS - - -40
Pulsed Drain-Source Diode
Forward Current
ISM - - -160
Notes:
1. Pulse Test: Pulse width300µs, duty cycle2%.
2. The surface of the device is mounted on a FR4 board, t10sec.
Unit Test Condition
V VGS=0, ID= -250µA
µA VDS= -40V, VGS=0
nA VDS=0V, VGS= ±20V
V VDS=VGS, ID= -250µA
mVGS= -10V, ID= -12A
S VDS= -5V, ID= -12A
VDS= -20V
pF VGS=0V
f=1MHz
VDS= -20V
nC VGS= -10V
ID= -12A
VDD= -20V
nS VGS= -10V
RG=3
ID= -20A
V IS= -20A, VGS=0
A
A
http://www.SeCoSGmbH.com/
13-Dec-2016 Rev.B
Any changes of specification will not be informed individually.
Page 2 of 3


Part Number SSD40P04J
Description P-Channel Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 3 Pages
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