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SSD40P04J - P-Channel MOSFET

Description

SSD40P04J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is well suited for high current load applications.

Features

  • High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability.

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Datasheet Details

Part number SSD40P04J
Manufacturer SeCoS
File Size 307.61 KB
Description P-Channel MOSFET
Datasheet download datasheet SSD40P04J Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSD40P04J -40A, -40V, RDS(ON) 14 mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD40P04J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load applications. FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS Power switching applications Hard switched and high frequency circuits Uninterruptible power supply MARKING CJU40P04 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.
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