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SSD40P04J - P-Channel MOSFET

General Description

SSD40P04J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is well suited for high current load applications.

Overview

Elektronische Bauelemente SSD40P04J -40A, -40V, RDS(ON) 14 mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen.

Key Features

  • High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability.