SSD50N10
SSD50N10 is N-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SSD50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
TO-252(D-Pack)
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent Cd V/dt effect decline 100% EAS Guaranteed Green Device Available
MARKING
50N10
Date Code
PACKAGE INFORMATION
Package
TO-252
2.5K
Leader Size 13 inch
Gate
Drain
Source
REF.
Millimeter Min. Max.
REF.
Millimeter Min. Max.
A 6.35 6.80 J 2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43...
