900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SeCoS

SSD70P03-C Datasheet Preview

SSD70P03-C Datasheet

P-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSD70P03-C
-70A , -30V , RDS(O ) 7.5m
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSD70P03-C is the highest performance
trench P-ch MOSFETs with extreme high cell density,
which provide excellent RDS(ON) and gate charge for
most of the synchronous buck converter applications.
The SSD70P03-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Lower Gate Charge
Advanced high cell density Trench technology
Green Device Available
MARKING
70P03
= Date code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
SSD70P03-C
Lead (Pb)-free and Halogen-free
TO-252
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.90 J 2.186 2.386
B 4.95 5.50 K 0.64 1.14
C 2.10 2.50 M 0.50 1.14
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F 2.90 REF P 0.58REF.
G 5.40 6.40
H 0.60 1.20
2
Drain
1
Gate
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±20
Continuous Drain Current 1 @VGS=10V
Pulsed Drain Current 2
Total Power Dissipation 3
TC=25°C
TC=100°C
TC=25°C
ID
IDM
PD
-70
-50
-200
78
Operating Junction & Storage Temperature
TJ, TSTG
Thermal Resistance Rating
-55~150
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case 1
RθJA
RθJC
t10sec, 20
Steady State, 50
1.6
3
Source
Unit
V
V
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
17-Sep-2019 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SSD70P03-C Datasheet Preview

SSD70P03-C Datasheet

P-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSD70P03-C
-70A , -30V , RDS(O ) 7.5m
P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
BVDSS
VGS(th)
IGSS
IDSS
-30
-1
-
-
-
--
- -2.5
- ±100
- -1
- -5
Static Drain-Source On-Resistance 2
RDS(ON)
-
-
- 7.5
- 13
Total Gate Charge
Qg - 60
Gate-Source Charge
Qgs -
9
Gate-Drain Change
Qgd - 15
Turn-on Delay Time
Td(on)
-
17
Rise Time
Tr - 40
Turn-off Delay Time
Td(off)
-
55
Fall Time
Tf - 13
Input Capacitance
Ciss - 3450
Output Capacitance
Coss - 255
Reverse Transfer Capacitance
Crss - 140
Source-Drain Diode
Diode Forward Voltage 2
Continuous Source Current 1
VSD -
IS -
-
-
Reverse Recovery Time
trr - 22
Reverse Recovery Charge
Qrr - 72
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. Pulse width limited by maximum junction temperature
-
-
-
-
-
-
-
-
-
-
-1.2
-70
-
-
Unit
Test Conditions
V VGS=0, ID= -250uA
V VDS=VGS, ID= -250uA
nA VGS= ±20V
VDS= -24V, VGS=0, TJ=25°C
uA
VDS= -24V, VGS=0, TJ=55°C
VGS= -10V, ID= -20A
mΩ
VGS= -4.5V, ID= -15A
ID= -18A
nC VDS= -15V
VGS= -10V
VDD= -15V
nS ID= -20A
VGS= -10V
RG=3.3Ω
VGS =0
pF VDS= -25V
f=1.0MHz
V IS= -1A, VGS=0, TJ=25°C
A
nS IF= -20A, dl/dt=100A/µs,
nC TJ=25°C
http://www.SeCoSGmbH.com/
17-Sep-2019 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number SSD70P03-C
Description P-Channel MOSFET
Maker SeCoS
Total Page 4 Pages
PDF Download

SSD70P03-C Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SSD70P03-C P-Channel MOSFET
SeCoS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy