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SSE04N65SL - N-Ch Enhancement Mode Power MOSFET

General Description

The SSE04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Key Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.6 5.8 7.0 1.2 1.45.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSE04N65SL 4A , 650V , RDS(ON) 2.7Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-220P FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.6 5.8 7.0 1.2 1.