Title | |
Description | The SSE04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-220P FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C... |
Features |
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
1
Gate
2
Drain
3
Source
REF.
A B C D E F G
Millimeter
Min. Max.
9.3
10.6
14.2 16.5
2.7 BSC.
12.6 14.7
1.0
1.8
0.4
1.0
3.6
4.8
REF.
H I J K L M
Millimeter
Min. Max.
2.54 BCS.
1.8
2.9
2....
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Datasheet |
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Stock | In stock |
Price | |
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