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SSE07N80SL - N-Ch Enhancement Mode Power MOSFET

General Description

The SSE07N80SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Key Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.6 5.8 7.0 1.2 1.45.

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Full PDF Text Transcription for SSE07N80SL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSE07N80SL. For precise diagrams, and layout, please refer to the original PDF.

Elektronische Bauelemente SSE07N80SL 7A , 800V , RDS(ON) 1.6Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTIO...

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S Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE07N80SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-220P FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.6

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