SSE166N10SV-C Datasheet (SeCoS) - N-Channel Shielded Gate Trench Power MOSFET

SSE166N10SV-C Description

The SSE166N10SV-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE166N10SV-C meet the RoHS and Green Product requirement with full function reliability approve

SSE166N10SV-C Features

* Shielded Gate Trench Technology High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 166N10SV =Date Code ORDER INFORMATION 1 Gate Part Number Type SSE166N10SV-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.70 10.60

SSE166N10SV-C, N-Channel Shielded Gate Trench Power MOSFET - SeCoS

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SSE166N10SV-C Description