Datasheet4U Logo Datasheet4U.com

SSG4407J-C - P-Channel Enhancement Mode Power MosFET

Description

The SSG4407J-C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

Features

  • Simple Drive Requirement.
  • Lower On-Resistance.
  • Low Gate Charge.

📥 Download Datasheet

Datasheet preview – SSG4407J-C

Datasheet Details

Part number SSG4407J-C
Manufacturer SeCoS
File Size 234.11 KB
Description P-Channel Enhancement Mode Power MosFET
Datasheet download datasheet SSG4407J-C Datasheet
Additional preview pages of the SSG4407J-C datasheet.

📁 Similar Datasheet

  • SSG4228 - 30V Dual N-Channel MOSFET (VBsemi)
  • SSG42N60 - 50A 600V FAST POWER IGBT (Solid States Devices)
  • SSG4394N - N-Channel Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie)
  • SSG4396N - N-Channel MOSFET (SeCoS Halbleitertechnologie)
  • SSG4510 - N & P-Ch Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie)
  • SSG4530C - N & P-Ch Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie)
  • SSG4536C - N & P-Ch Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie)
  • SSG4565 - Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie GmbH)
  • SSG4575 - Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie GmbH)
  • SSG200EF60E - 200 AMP N-CHANNEL IGBT (Solid States Devices)
Other Datasheets by SeCoS
  • SSG4407 - P-Channel Enhancement Mode Power MosFET
  • SSG4407PE - P-Channel Mode Power MOSFET
  • SSG4401P - P-Ch Enhancement Mode Power MOSFET
  • SSG4402N - N-Ch Enhancement Mode Power MOSFET
  • SSG4403 - P-Ch Enhancement Mode Power MOSFET
  • SSG4406F-C - N-Ch Enhancement Mode Power MOSFET
  • SSG4410 - N-Ch Enhancement Mode Power MOSFET
  • SSG4410N-C - N-Ch Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
Elektronische Bauelemente SSG4407J-C -11A, -30V, RDS(ON) 15mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4407J-C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications SOP-8 B FEATURES  Simple Drive Requirement  Lower On-Resistance  Low Gate Charge MARKING Q4407  Q4407S  = Production Line Indication = Production Line Indication PACKAGE INFORMATION Package MPQ SOP-8 4K Leader Size 13 inch A H G LD M C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP. REF. H J K L M N Millimeter Min.
Published: |