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SSG4490N Datasheet Preview

SSG4490N Datasheet

N-Channel Enhancement Mode Power MOSFET

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Elektronische Bauelemente
SSG4490N
5.2 A, 100 V, RDS(ON) 78 m
N-Ch Enhancement Mode Power MOSFET
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low RDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management In portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOIC-8 saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize
13’ inch
SOP-8
B
A
HG
LD
M
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
SD
SD
SD
GD
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
Operating Junction & Storage Temperature Range
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @ TA = 25°C
PD @ TA = 70°C
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Case (Max.) 1 t5 sec
RθJC
Thermal Resistance Junction-ambient (Max.) 1 t5 sec
RθJA
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Ratings
100
±20
5.2
3.9
50
2.3
3.1
2.2
-55 ~ 150
25
50
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
17-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2




SeCoS

SSG4490N Datasheet Preview

SSG4490N Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SSG4490N
5.2 A, 100 V, RDS(ON) 78 m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ.
Gate Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
gfs
VSD
Qg
Qgs
Qgd
Static
1-
--
--
--
20 -
--
--
- 40
- 0.7
Dynamic 2
- 12.5
- 2.6
- 4.6
Switching
Turn-On Delay Time
Td(on)
-
Rise Time
Tr -
Turn-Off Delay Time
Td(off)
-
Fall Time
Tf -
Notes
1. Pulse testPW 300μs duty cycle 2%.
2. Guaranteed by design, not subject to production testing.
20
9
70
20
Max.
-
±100
1
25
-
78
92
-
-
-
-
-
-
-
-
-
Unit Teat Conditions
V VDS= VGS, ID=-250μA
nA VDS= 0V, VGS=20V
μA VDS=80V, VGS=0V
μA VDS=80V, VGS=0V, TJ=55°C
A VDS=5V, VGS=10V
mVGS=10V, ID=5.2A
VGS=4.5V, ID=4.8A
S VDS=15V, ID=5.2A
V IS=2.3A, VGS=0V
ID=5.2A
nC VDS=15V
VGS=4.5V
VDD=25V
nS
ID=1A
VGEN=10V
RL=25
http://www.SeCoSGmbH.com/
17-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2


Part Number SSG4490N
Description N-Channel Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 2 Pages
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