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SSG4953 Datasheet Dual-p Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SSG4953 -6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen &.

General Description

The SSG4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V.

The device is suitable for use as a load switch or in PWM applications.

It may be used in a mon drain arrangement to from a bidirectional blocking switch.

Key Features

  • Simple Drive Requirement.
  • Lower On-resistance.
  • Low Gate Charge.

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