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SSG5N06-C Datasheet - SeCoS

N-Channel Enhancement Mode Power MosFET

SSG5N06-C Features

* Advanced High Cell Density Trench Technology

* Super Low Gate Charge

* Green Device Available MARKING 5N06   = Date code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.79 6.20

SSG5N06-C General Description

The SSG5N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSG5N06-C meet the RoHS and Green Product requirement with full function reliability approved. FEA.

SSG5N06-C Datasheet (683.66 KB)

Preview of SSG5N06-C PDF

Datasheet Details

Part number:

SSG5N06-C

Manufacturer:

SeCoS

File Size:

683.66 KB

Description:

N-channel enhancement mode power mosfet.
Elektronische Bauelemente SSG5N06-C 5A, 60V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies .

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TAGS

SSG5N06-C N-Channel Enhancement Mode Power MosFET SeCoS

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