Datasheet Summary
Elektronische Bauelemente
8A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET
RoHS pliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
Features
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
MARKING
8N10SC
Date Code
PACKAGE INFORMATION
Package
SOP-8
3K
Leader Size 13 inch
SOP-8
LD M
JK FE
REF.
A B C D E F G
Millimeter
Min....