SeCoS Halbleitertechnologie GmbH SSG8N10
The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .| Part No. | SSG8N10 |
|---|---|
| Datasheet | SSG8N10 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | N-Channel Enhancement Mode Power MosFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 8N10SC Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G DABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current 1 TA=25°C ID TA=70°C Pulsed Drain Current 2 IDM Total Power Dissipation @ TA=25°C 4 PD Single Pulse Avalanche Energy 3 EAS 8 6.5 25 1.5 26.6 Single Pulse Avalanche Current IAS 20 Operating Junction and Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 RθJA 85 Unit V V A A A W mJ A °C °C / W 25-Apr-2013 Rev.
