SSG8N10 Overview
The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.
| Part number | SSG8N10 |
|---|---|
| Datasheet | SSG8N10-SeCoS.pdf |
| File Size | 454.99 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | N-Channel Enhancement Mode Power MosFET |
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The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.
See all SeCoS Halbleitertechnologie GmbH datasheets
| Part Number | Description |
|---|---|
| SSG8603-C | N & P-Ch Enhancement Mode Power MOSFET |
| SSG0410 | N-Channel MOSFET |
| SSG04N15B-C | N-Channel MOSFET |
| SSG05P03-C | P-Ch Enhancement Mode Power MOSFET |
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| SSG08N10-C | N-Ch Enhancement Mode Power MOSFET |
| SSG10N10 | N-Channel Enhancement Mode Power MosFET |
| SSG12N03 | N-Channel MOSFET |
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| SSG13P03 | P-Ch Enhancement Mode Power MOSFET |