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SSG9926J-C Datasheet Preview

SSG9926J-C Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

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Elektronische Bauelemente
SSG9926J-C
4.8A, 20V, RDS(ON) 30m
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSG9926J-C provides the designers with the best
combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
FEATURES
Advanced Trench Processing Technology
High Density Cell Design for Ultra Low On-Resistance
High Power and Current Handing Capability
MARKING
.Q9926
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
4K
Leader Size
13 inch
SOP-8
B
LD
M
A
HG
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.79 6.20
4.70 5.11
3.80 4.00
0° 8°
0.40 1.27
0.10 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.3 1.752
0 0.25
0.25 REF.
ORDER INFORMATION
Part Number
Type
SSG9926J-C Lead (Pb)-free and Halogen-free
SD
GD
SD
GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 1
VGS
ID
Pulsed Drain Current
Power Dissipation 1
Thermal Resistance from Junction-Ambient 1
IDM
PD
RθJA
Junction and Storage Temperature Range
Note:
1. The surface of the device is mounted on a 1’’×1’’ FR4 board.
TJ, TSTG
Ratings
20
±12
4.8
30
1.25
100
150, -55~150
Unit
V
V
A
A
W
°C/W
°C
http://www.SeCoSGmbH.com/
01-Nov-2017 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SSG9926J-C Datasheet Preview

SSG9926J-C Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SSG9926J-C
4.8A, 20V, RDS(ON) 30m
Dual-N Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
BVDSS
20
-
-
Zero Gate Voltage Drain Current
IDSS
-
-
1
Gate-Body Leakage Current
Gate-Threshold Voltage 1
IGSS
VGS(th)
-
0.6
- ±100
- 1.2
Drain-Source On-Resistance 1
Forward Transfer Conductance 1
RDS(ON)
-
-
- 30
- 40
gfs 15 -
-
Total Gate Charge
Qg - 20 -
Gate-Source Charge
Qgs - 3 -
Gate-Drain (“Miller”) Charge
Qgd - 3.3 -
Turn-on Delay Time
Td(on) - 35 -
Rise Time
Tr - 60 -
Turn-off Delay Time
Td(off) - 75 -
Fall Time
Tf - 30 -
Source-Drain Diode Characteristics
Maximum Diode Forward Current
Diode Forward Voltage 1
IS -
VSD -
-1
- 1.2
Source-Drain Reverse Recovery Time
TRR
Note:
1. Pulse Test: Pulse width300µs, duty cycle2%.
-
- 80
Unit
Test conditions
V VGS=0, ID=250µA
µA VDS=20V, VGS=0
nA VDS=0, VGS= ±12V
V VDS=VGS, ID=250µA
VGS=4.5V, ID=6A
m
VGS=2.5V, ID=5A
S VDS=15V, ID=6A
VDS=15V
nC VGS=4.5V
ID=6A
VDD=15V
VGEN=4.5V
nS RL=15
RGEN=6
ID=1A
A
V IS=1.7A, VGS=0
nS IF=1.7A, di/dt=100A/µS
http://www.SeCoSGmbH.com/
01-Nov-2017 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 3


Part Number SSG9926J-C
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 3 Pages
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