SSG9926J-C
SSG9926J-C is Dual N-Channel Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente
4.8A, 20V, RDS(ON) 30mΩ Dual-N Enhancement Mode Power MOSFET
Ro HS pliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSG9926J-C provides the designers with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Features
Advanced Trench Processing Technology High Density Cell Design for Ultra Low On-Resistance High Power and Current Handing Capability
MARKING
.Q9926
= Date Code
PACKAGE INFORMATION
Package
SOP-8
4K
Leader Size 13 inch
SOP-8
LD M
A HG
JK F
REF.
A B C D E F G
Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00
0° 8° 0.40 1.27 0.10 0.25
1.27 TYP.
REF.
H J K L M N
Millimeter Min. Max. 0.33 0.51 0.375 REF.
45°REF. 1.3 1.752 0 0.25 0.25 REF.
ORDER INFORMATION
Part...
