SSI3139J-C Overview
SSI3139J-C is a Dual P-Channel MOS which has been designed to be used as a Power Trench process to optimize RDS(ON).
SSI3139J-C Key Features
- High side switching
- Low on-resistance
- Low threshold
- Fast switching speed
SSI3139J-C datasheet by SeCoS Halbleitertechnologie GmbH.
| Part number | SSI3139J-C |
|---|---|
| Datasheet | SSI3139J-C-SeCoS.pdf |
| File Size | 305.59 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | Dual P-Ch Enhancement Mode Power MOSFET |
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SSI3139J-C is a Dual P-Channel MOS which has been designed to be used as a Power Trench process to optimize RDS(ON).