SSI3139J-C Description
SSI3139J-C is a Dual P-Channel MOS which has been designed to be used as a Power Trench process to optimize RDS(ON).
SSI3139J-C Key Features
- High side switching
- Low on-resistance
- Low threshold
- Fast switching speed
- Part: SSI3139J-C
- Manufacturer: SeCoS Halbleitertechnologie GmbH
- Size: 305.59 KB
Related SeCoS Halbleitertechnologie GmbH Datasheets
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