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SSM0410-C Datasheet Preview

SSM0410-C Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SSM0410-C
3.5A, 100V, RDS(ON) 148m
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM0410-C is the highest performance trench
N-Ch MOSFETs with extreme high cell density, which
provide excellent RDS(ON) and gate charge for most of
the synchronous buck converter applications.
The SSM0410-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology
Super Low Gate Charge
Green Device Available
MARKING
0410
= Date code
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
SOT-223
A
M
Top View C B
KL
E
1
2
3
D
F GH
4
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.90 6.70
6.70 7.30
3.30 3.80
1.40 1.90
4.45 4.75
0.60 0.85
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
- 0.18
2.00 REF.
0.20 0.40
1.10 REF.
2.30 REF.
2.80 3.20
ORDER INFORMATION
Part Number
Type
SSM0410-C Lead (Pb)-free and Halogen-free
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 1 VGS@10V
TC=25°C
TA=25°C
VGS
ID
Pulsed Drain Current 3
TA=70°C
IDM
Total Power Dissipation
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
Thermal Data
Thermal Resistance Junction-Ambient 1
RθJA
Thermal Resistance Junction-Ambient 2
Thermal Resistance Junction-Case 1
RθJA
RθJC
D
24
1
G
Ratings
100
±20
6
3.5
2.8
14
2.5
-55~150
3
S
t10sec, 50
Steady State, 85
120
30
Unit
V
V
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
26-Oct-2017 Rev. D
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SSM0410-C Datasheet Preview

SSM0410-C Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SSM0410-C
3.5A, 100V, RDS(ON) 148m
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transfer Conductance
Gate-Source Leakage Current
Drain-Source Leakage Current
BVDSS
VGS(th)
gfs
IGSS
IDSS
100
1
-
-
-
-
--
- 2.5
4-
- ±100
-1
- 10
Drain-Source On Resistance 4
RDS(ON)
-
-
- 148
- 150
Total Gate Charge
Qg - 20 -
Gate-Source Charge
Qgs - 4 -
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Qgd - 5 -
Td(on) - 17.3 -
Tr - 2.8 -
Td(off)
-
50
-
Tf - 2.8 -
Ciss - 1077 -
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current 1
Pulsed Source Current 3
Diode Forward Voltage 4
Reverse Recovery Time
Coss - 46 -
Crss - 32
Source-Drain Diode
-
IS - - 3.5
ISM -
VSD -
- 14
- 1.2
trr - 26 -
Reverse Recovery Charge
Qrr -
Notes:
1.
2.
3.
4.
Surface mounted on a 1 inch2 FR4 board with 2OZ copper.
When mounted on Min. copper pad.
Pulse width limited by Max. junction temperature.
Pulse width300us, duty cycle2%.
15
-
Unit
Test Conditions
V VGS=0, ID=250uA
V VDS=10V, ID=250uA
S VDS=5V, ID=2A
nA VGS= ±20V
VDS=80V, VGS=0, TJ=25°C
µA
VDS=80V, VGS=0, TJ=55°C
VGS=10V, ID=2.6A
m
VGS=4.5V, ID=1.7A
VGS=10V
nC VDS=50V
ID=6A
VDD=50V
VGS=10V
nS ID=1A
RG=3.3
RL=50
VDS=15V
pF VGS=0
f=1MHz
A
V IS=1A, VGS=0
nS IF=6A, dI/dt=100A/µs
nC TJ=25°C
http://www.SeCoSGmbH.com/
26-Oct-2017 Rev. D
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number SSM0410-C
Description N-Channel Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 4 Pages
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