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SSM9573-C Datasheet Preview

SSM9573-C Datasheet

P-Channel MOSFET

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Elektronische Bauelemente
SSM9573-C
-2.7A, -60V, RDS(ON) 175m
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM9573-C provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-223 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
9573
= Date code
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
SOT-223
A
M
4
Top View C B
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.90 6.70
6.70 7.30
3.30 3.80
1.42 1.90
4.45 4.75
0.60 0.85
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.18
2.00 REF.
0.20 0.40
1.10 REF.
2.30 REF.
2.80 3.20
ORDER INFORMATION
Part Number
Type
SSM9573-C
Lead (Pb)-free and Halogen-free
1
Gate
2
Drain
3
Source
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain Current 1 @VGS=10V
ID
TA=70°C
Pulsed Drain Current 2
IDM
Power Dissipation 3
TA=25°C
PD
TC=25°C
Operating Junction & Storage Temperature
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient 1 (Max).
RθJA
Thermal Resistance Junction-Case 1 (Max).
RθJC
Ratings
-60
±20
-2.7
-2
-12
1.5
2.6
-55~150
85
48
Unit
V
V
A
A
A
W
°C
°C/W
°C/W
http://www.SeCoSGmbH.com/
17-Jun-2020 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SSM9573-C Datasheet Preview

SSM9573-C Datasheet

P-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSM9573-C
-2.7A, -60V, RDS(ON) 175m
P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
VGS(th)
-60
-
-1
-
-
V VGS=0, ID= -250µA
-3
V VDS=VGS, ID= -250µA
Gate-Source Leakage Current
IGSS
-
-
±100 nA VGS= ±20V
Drain-Source Leakage
Current
TJ=25°C
TJ=55°C
-
-
-1
VDS= -48V, VGS=0
IDSS
µA
-
-
-5
V DS= -48V, VGS=0
Static Drain-Source On-Resistance 2
-
-
175
VGS= -10V, ID= -2.5A
RDS(ON)
m
-
-
230
VGS= -4.5V, ID= -1.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain (‘‘Miller’’) Change
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
8.3
-
-
1.8
-
-
1.6
-
-
4.1
-
-
21
-
-
20.3
-
-
21
-
ID= -2.5A
nC VDS= -48V
VGS= -4.5V
VDS= -15V
nS
VGS= -10V
RG=3.3
ID= -1A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
428
-
VGS=0
Coss
-
38
-
pF VDS=15V
Crss
-
26
-
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage 2
VSD
-
-
-1.2
V IS= -1A, VGS=0
Continuous Source Current 1.4
Pulsed Source Current 2.4
IS
-
-
-2.7
A VDS=VGS=0, Force Current
ISM
-
-
-12
Notes:
1.
2.
3.
4.
Surface mounted on a 1 inch2 FR4 board with 2OZ copper.
The data tested by pulsed, pulse width300us, duty cycle2%.
The power dissipation is limited by 150°C junction temperature.
The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
17-Jun-2020 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 4



Part Number SSM9573-C
Description P-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
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