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SSPR48N04-C - N-Channel Enhancement Mode Power MosFET

General Description

The SSPR48N04-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSPR48N04-C meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSPR48N04-C 48A, 40V, RDS(ON) 8.5mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSPR48N04-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPR48N04-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge MARKING SPR-8PP 48N04   = Date code PACKAGE INFORMATION Package MPQ Leader Size SPR-8PP 3K 13 inch S ORDER INFORMATION S Part Number Type S SSPR48N04-C Lead (Pb)-free and Halogen-free G REF.