SSQ07N60J - N-Channel MOSFET

Product Overview

SeCoS

Part number	SSQ07N60J
Manufacturer	SeCoS
File Size	466.07 KB
Description	N-Channel MOSFET
Datasheet	SSQ07N60J Datasheet
Additional preview pages of the SSQ07N60J datasheet.

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is characterized for The Use in Bridging Circuits IDSS and VDS(ON) Specified at Elevated Temperature REF. A B C D E F G H Millimeter Min. Max. 10.010 10.350 3.735 3.935 2.590 2.890 12.060 12.460 1.170 1.370 0.710 0.910 13.400 13.800 2.540 TYP. REF. I J K L M N Q Millimeter Min. Max. 4.980 5.180 3.560 3.960 4.470 4.670 1.200 1.400 8.500 8.900 2.520.

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Published: May 19, 2020 |