Datasheet4U Logo Datasheet4U.com

SSQ07N60J - N-Channel MOSFET

General Description

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Key Features

  • Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is characterized for The Use in Bridging Circuits IDSS and VDS(ON) Specified at Elevated Temperature REF. A B C D E F G H Millimeter Min. Max. 10.010 10.350 3.735 3.935 2.590 2.890 12.060 12.460 1.170 1.370 0.710 0.910 13.400 13.800 2.540 TYP. REF. I J K L M N Q Millimeter Min. Max. 4.980 5.180 3.560 3.960 4.470 4.670 1.200 1.400 8.500 8.900 2.520.

📥 Download Datasheet

Datasheet Details

Part number SSQ07N60J
Manufacturer SeCoS
File Size 466.07 KB
Description N-Channel MOSFET
Datasheet download datasheet SSQ07N60J Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSQ-105-01-T-S HEADER CONNECTOR Samtec
SSQ-121LHT Slide Switches Mitsumishi
SSQ-121MHT Slide Switches Mitsumishi
SSQ-121MVT Slide Switches Mitsumishi
SSQ-122LHT Slide Switches Mitsumishi

Other Datasheets by SeCoS

Part Number Description
SSQ04N65J N-Channel MOSFET
SSQ105N60SG N-Channel MOSFET
SSQ182N45SG N-Ch Enhancement Mode Power MOSFET
SSQ73N10SG N-Channel Enhancement Mode Power MOSFET
SSQ85N80SG N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SSQ07N60J 7 A, 600 V, RDS(ON) 1.3 Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.