SSR52N60H-C Datasheet | SeCoS Halbleitertechnologie GmbH

DESCRIPTION The SSR52N60H-C is power MOSFET using Super Junction Technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSR52N60H-C meet the Ro HS and Green Product requirement with full function reliability approved. TO-247 FEATURES - Advanced Super Junction Technology - Super Low Gate Charge - Green Device Available MARKING 52N60H  = Date Code ORDER INFORMATION Part Number Type Drain Lead (Pb)-free and Halogen-free 1 Gate Source REF. A B C D E F G H Millimeter Min. Max. 15.75 16.13 4.83 5.21 20.8 21.1 19.81 20.32 16.25 17.65 6.04 6.30 5.44 BSC 2.29 2.55 REF. I J K L M N P Millimeter Min. Max. 2.87 3.22 0.55 0.69 1.12 1.33 4.10 4.44 1.91 2.39 Ø3.56 Ø3.65 13.46 14.16 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current 1 @VGS=10V TC=100°C Pulsed Drain Current...