Description
The SSRF04N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
Features
- Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
1
Gate
2
Drain
3
Source
ITO-220
BN
MA
D E
H JC
K LL
G F
REF. A B C D E F G
Millimeter
Min. Max. 14.60 16.50
9.50 10.50
12.60 14.00
4.30 5.10
2.30
3.2
2.30 3.10
0.30 0.75
REF. H J K L M N
Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.95 2.34 2.74 2.40 3.60 φ 3.0 φ 3.4.
SSRF04N60SL-SeCoS.pdf
