SST2019L-C
SST2019L-C is Dual N-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SST2019L-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SST2019L-C meet the Ro HS and Green Product requirement with full function reliability approved.
SOT-26
FEATURES
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available
MARKING
L2019
= Date Code
PACKAGE INFORMATION
Package
SOT-26
3K
Leader Size 7 inch
REF.
A B C D E F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
- 1.30
1.90 REF.
0.25 0.50
REF.
G H J K L
Millimeter
Min. Max.
0.60 REF.
0.12...
