SST2602 Datasheet - SeCoS

N-Channel Enhancement Mode Power MosFET

SST2602 Features

* Low On-Resistance

* Capable of 2.5V Gate Drive D Dimensions in millimeters D 6 D 5 S 4 Date Code 2602 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@4.5V Continuous Drain Current,VGS@4.5V Pulsed Drain Curren

SST2602 General Description

0.37Ref. 0.20 0.60 Ref. 2.60 3.00 The SST2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SST2602 is universally used for all commercial-industrial applications. 0.25 1.40 1.80 0.30 0.55 0.95 Ref. 2.70.

SST2602 Datasheet (365.66 KB)

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Datasheet Details

Part number:

SST2602

Manufacturer:

SeCoS

File Size:

365.66 KB

Description:

N-channel enhancement mode power mosfet.
www.DataSheet4U.com SST2602 6.3A, 20V,RDS(ON) 34m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-.

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SST2602 N-Channel Enhancement Mode Power MosFET SeCoS

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SST2602 Features

SST2602 General Description

Datasheet Details

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SST2602 Distributor