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SST2610 - N-Channel Enhancement Mode Power MosFET

General Description

The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

It is universally used for all commercial-industrial applications.

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Full PDF Text Transcription for SST2610 (Reference)

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www.DataSheet4U.com SST2610 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies ...

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onische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION z z The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. It is universally used for all commercial-industrial applications. APPLICATIONS z z Low on-resistance Capable of 2.5V gate drive PACKAGE INFORMATION REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 0.30 0.55 0 0.10 0 10 REF. G H I J K L Millimeter Min. Max. 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF.

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