SSY5829P Description
The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers,PCMCIA cards, cellular and cordless telephones.
SSY5829P Key Features
- Low RDS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe 1206-8CF saves board space
- Fast switching speed
- High performance trench technology
- 2.5 A, -20 V, RDS(ON) 0.110 P-Channel Enhancement MOSFET
- Dynamic 2
SSY5829P Applications
- Low RDS(on) provides higher efficiency and extends battery life