SSY5829P Datasheet - SeCoS

P-Channel MOSFET

SSY5829P Features

* Low RDS(on) provides higher efficiency and extends battery life.

* Low thermal impedance copper leadframe 1206-8CF saves board space.

* Fast switching speed.

* High performance trench technology. PACKAGE INFORMATION Package MPQ 1206-8CF 3K LeaderSize 7’ inch REF. A B C D E F

SSY5829P General Description

The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers,PCMCIA card.

SSY5829P Datasheet (652.97 KB)

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Datasheet Details

Part number:

SSY5829P

Manufacturer:

SeCoS

File Size:

652.97 KB

Description:

P-channel mosfet.
Elektronische Bauelemente SSY5829P -2.5 A, -20 V, RDS(ON) 0.110  P-Channel Enhancement MOSFET With Schottky Diode RoHS Compliant Product A suffix o.

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SSY5829P P-Channel MOSFET SeCoS

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SSY5829P Features

SSY5829P General Description

Datasheet Details

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