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STT3402N Datasheet Preview

STT3402N Datasheet

N-Channel Enhancement Mode Mos.FET

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Elektronische Bauelemente
STT3402N
6.3 A, 30 V, RDS(ON) 27 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density
process. Low RDS(on) assures minimal power loss and conserves energy,
making this device ideal for use in power management circuitry. Typical
applications are power switch, power management in portable and
battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
TSOP-6
A
E
L
654
B
TYPICAL APPLICATIONS
Low RDS(on) Provides Higher Efficiency and
Extends Battery Life.
Low Gate Charge.
Fast Switch.
Miniature TSOP-6 Surface Mount Package
Saves Board Space.
PRODUCT SUMMARY
STT3402N
VDS(V)
30
RDS(on) (m
0.027@VGS= 10V
0.035@VGS= 4.5V
ID(A)
6.3
5.5
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
LeaderSize
7’ inch
123
F
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
DD
DD
GS
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
Operating Junction and Storage Temperature Range
TA= 25°C
TA= 70°C
TA= 25°C
TA= 70°C
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Ratings
Maximum
30
±20
6.3
5.2
±20
1.3
1.6
1.0
-55 ~ 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient 1
Notes
t 5 sec
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Symbol
RJA
Maximum
78
Unit
V
V
A
A
A
W
°C
Unit
°C / W
http://www.SeCoSGmbH.com/
19-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

STT3402N Datasheet Preview

STT3402N Datasheet

N-Channel Enhancement Mode Mos.FET

No Preview Available !

Elektronische Bauelemente
STT3402N
6.3 A, 30 V, RDS(ON) 27 m
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
SWITCH OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
IGSS
IDSS
30
-
-
-
- - V VGS=0V, ID= 250uA
- ±100 nA VDS= 0V, VGS= ±20V
-1
VDS= 24V, VGS= 0V
uA
- 10
VDS= 24V, VGS= 0V, TJ= 55°C
SWITCH ON CHARACTERISTICS
Gate-Threshold Voltage
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage 1
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS(th) 1.0 1.6 3.0
V VDS=VGS, ID= 250uA
ID(on)
20
-
-
A VDS = 5V, VGS= 10V
- 23 27
VGS= 10V, ID= 6.3A
RDS(ON)
-
32 39 mVGS= 10V, ID= 6.3A, TJ= 55°C
- 29 35
VGS= 4.5V, ID= 5.5A
gfs
- 45 -
S VDS= 10V, ID= 6.3A
VSD - 0.75 1.2 V IS= 1.3A, VGS= 0V
DYNAMIC b
Qg - 9 13
Qgs
-
2.9
-
nC
VDS= 15V, VGS= 5V,
ID= 6.3A, RL= 6
Qgd - 3.2 -
SWITCHING CHARACTERISTICS
Turn-on Delay Time
Td(on)
-
6 13
Rise Time
Turn-off Delay Time
Tr
Td(off)
-
-
10
18
19
30
nS
VDS= 15V, VGEN= 10V,
RL= 6, ID= 1A, RGEN= 6
Fall Time
Tf - 5 13
Notes
1 Pulse testPW 300 us duty cycle 2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
19-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number STT3402N
Description N-Channel Enhancement Mode Mos.FET
Maker SeCoS
Total Page 4 Pages
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