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STT3455 Datasheet Preview

STT3455 Datasheet

P-Channel Enhancement Mode Mos.FET

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Elektronische Bauelemente
STT3455
-4.0A, -30V,RDS(ON) 100m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The STT3455 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The STT3455 is universally used for all commercial-industrial applications.
Features
* Fast Switching Characteristic
* Lower Gate Charge
* Small Footprint & Low Profile Package
D
G
Date Code
DDS
6 54
3455
S 123
DDG
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 3
Continuous Drain Current 3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbo l
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Tj, Tstg
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0° 10°
0.30 0.50
0.95 REF.
1.90 REF.
Ratings
-30
±20
-4.0
-3.3
-20
2.0
0.016
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Symbol
Rthj-a
Ratings
62.5
Unit
oC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4




SeCoS

STT3455 Datasheet Preview

STT3455 Datasheet

P-Channel Enhancement Mode Mos.FET

No Preview Available !

Elektronische Bauelemente
STT3455
-4.0A, -30V,RDS(ON) 100m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=55oC)
IGSS
IDSS
Static Drain-Source On-Resistance 2
RDS(ON)
Total Gate Charge 2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
-30
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.02
_
_
_
_
_
_
5.5
1
2.6
7
6
18
4
400
90
30
6
Max.
_
_
-3.0
±100
-1
-25
100
170
8.8
_
_
_
_
_
_
640
_
_
_
Unit Test Condition
V VGS=0V, ID=-250uA
V/ oC Reference to 25 oC,ID=-1mA
V VDS=VGS, ID=-250uA
nA VGS=±20V
uA VDS=-30V,VGS=0
uA VDS=-24V,VGS=0
VGS=-10V, ID=-3.5A
m
VGS=-4.5V, ID=-2.7A
ID=-4.0A
nC VDS=-24V
VGS=-4.5V
VDD=-15V
ID=-1A
nS VGS=-10V
RG=3.3
RD=15
VGS=0V
pF VDS=-25V
f=1.0MHz
S VDS=-5V, ID=-4.0A
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time 2
Reverse Recovery Charge
Symbol
VDS
Trr
Qrr
Min.
_
_
_
Typ.
_
21
14
Max.
-1.2
_
_
Unit Test Condition
V IS=-1.6A, VGS=0V.
nS Is=-4.0A, VGS=0V
nC dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.P uls e width 300us , dutycycle 2%.
3.Surface mounted on 1 in2 copper pad of FR4 board; 156OC/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4


Part Number STT3455
Description P-Channel Enhancement Mode Mos.FET
Maker SeCoS
Total Page 4 Pages
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