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STT3463P Datasheet Preview

STT3463P Datasheet

P-Channel Enhancement Mode Mos.FET

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Elektronische Bauelemente
STT3463P
-3 A, -60 V, RDS(ON) 155 m
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density process. Low RDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Miniature TSOP-6 surface mount package saves
board space.
High power and current handling capability.
Extended VGS range (±25) for battery pack
applications.
APPLICATION
PWMDC-DC converters, power management
in portable and battery-powered products such as computers,
printers, battery charger, telecommunication power system,
and telephones power system.
PACKAGE INFORMATION
Package
MPQ
Leader Size
TSOP-6
3K
7’ inch
TSOP-6
A
E
L
654
B
123
F
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
DD
DD
GS
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
TA= 25°C
TA= 70°C
ID
IDM
IS
Power Dissipation 1
TA= 25°C
TA= 70°C
PD
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t 5 sec
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RJA
Ratings
-60
±20
-3.0
-2.4
-15
-1.7
2.0
1.3
-55 ~ 150
62.5
110
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
08-Apr-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2




SeCoS

STT3463P Datasheet Preview

STT3463P Datasheet

P-Channel Enhancement Mode Mos.FET

No Preview Available !

Elektronische Bauelemente
STT3463P
-3 A, -60 V, RDS(ON) 155 m
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
-1
-
- -V
- ±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current 1
- - -1
IDSS
μA
- - -10
ID(on) -20 - - A
Drain-Source On-Resistance 1
Forward Transconductance 1
RDS(ON)
gfs
-
-
-
- 155
m
- 230
8-S
Diode Forward Voltage
VSD - - -1.2 V
Dynamic 2
Total Gate Charge
Qg - 18 -
Gate-Source Charge
Qgs - 5 - nC
Gate-Drain Charge
Qgd - 2 -
Turn-on Delay Time
Td(on) - 8 -
Rise Time
Turn-off Delay Time
Tr
- 10 -
nS
Td(off) - 35 -
Fall Time
Tf - 12 -
Notes:
1. Pulse testPW 300 us duty cycle 2%.
2. Guaranteed by design, not subject to production testing.
Test Conditions
VDS= VGS, ID= -250μA
VDS=0, VGS= ±20V
VDS= -48V, VGS=0
VDS= -48V, VGS=0, TJ= 55°C
VDS = -5V, VGS= -10V
VGS= -10V, ID= -3A
VGS= -4.5V, ID= -2.5A
VDS= -15V, ID= -3.0A
IS= -2.5A, VGS=0
VDS= -30V,
VGS= -4.5V,
ID= -3A
VDD= -30V,
VGEN= -10V,
RL=30,
ID= -1A,
RG=6
http://www.SeCoSGmbH.com/
08-Apr-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2


Part Number STT3463P
Description P-Channel Enhancement Mode Mos.FET
Maker SeCoS
Total Page 2 Pages
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