STT3470N - N-Channel MOSFET

SeCoS

STT3470N Datasheet Preview — Preview of STT3470N PDF

Datasheet Details

Part number	STT3470N
Manufacturer	SeCoS
File Size	163.00 KB
Description	N-Channel MOSFET
Datasheet	STT3470N-SeCoS.pdf

STT3470N Product details

Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

DG.
Low RDS(on) provides higher efficiency and extend battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.

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Published: Oct 15, 2014 |