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STT3470N - N-Channel MOSFET

General Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Key Features

  • DG.
  • Low RDS(on) provides higher efficiency and extend battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT3470N Elektronische Bauelemente 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. F A E 6 5 4 TSOP-6 L B 1 2 3 C K H J FEATURES  DG    Low RDS(on) provides higher efficiency and extend battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology REF.