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STT3490N - N-Channel MOSFET

Key Features

  • TSOP-6 A E 6 5 4 Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. L.

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STT3490N Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 1.2 A, 150 V, RDS(ON) 700 m RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free KEY FEATURES    TSOP-6 A E 6 5 4 Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. L TYPICAL APPLICATIONS    B White LED boost converters. Automotive Systems Industrial DC/DC Conversion Circuits F DG 1 2 3 C K H J PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 150 RDS(on) (m 700@VGS= 10V 1200@VGS= 4.5V ID(A) 1.2 1 D D G D D S REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.