STT6601 datasheet, mosfet equivalent, SeCoS

Features and benefits

z APPLICATIONS z z z z z z z z N-Channel 30V/2.8A, RDS(ON) = 68mΩ@VGS = 10 V 30V/2.3A, RDS(ON) = 78mΩ@VGS = 4.5 V 30V/1.5A, RDS(ON) = 108mΩ@VGS = 2.5 V P-Channel -30V.

Application

such as notebook computer power management and other battery-powered circuits where high-side switching, low in-line pow.

Description

The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These.

Image gallery