STT6601 MOSFET

SeCoS

Description

STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET RoHS .
The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology.

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Datasheet Specifications

Part number: STT6601
Manufacturer: SeCoS
File Size: 485.76 KB
Datasheet: STT6601-SeCoS.pdf
Description: MOSFET

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STT6601 MOSFET SeCoS

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