900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SeCoS Halbleitertechnologie

SBL30U200F Datasheet Preview

SBL30U200F Datasheet

Voltage 200V 30.0 Amp Low VF Trench Barrier Schottky Rectifier

No Preview Available !

Elektronische Bauelemente
SBL30U200F
Voltage 200V 30.0 Amp
Low VF Trench Barrier Schottky Rectifier
RoHS Compliant Product
A suffix of “-C” specifies halogen free
FEATURES
Trench Barrier Schottky technology
Low forward voltage drop
Low reverse current
High current capability
High reliability
High surge current capability
Epitaxial construction
ITO-220
BN
MA
D
E
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 1.98 g (Approximate)


H JC
K
LL
G
F
REF.
A
B
C

D
E
F
G
Millimeter
Min. Max.
14.60 15.70
9.50 10.50
12.60 14.00
4.30 4.70
2.30
3.2
2.30 2.90
0.30 0.75
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
2.70 4.00
0.90 1.50
0.50 0.90
2.34 2.74
2.40 3.00
3.0 3.4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
Rating
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified (Per Leg)
Current
(Per Device)
Peak Forward Surge Current, 8.3 ms single half sine-wave
Voltage Rate of Chance (Rated VR)
Typical Thermal Resistance
Operating and Storage Temperature Range
VRRM
VRSM
VDC
IF
IFSM
dv/dt
RJC
TJ,TSTG
200
200
200
15
30
250
10000
2
-40~150
Unit
V
V
V
A
A
V / μs
°C /W
°C
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Typ.
0.67
Maximum Instantaneous Forward
Voltage
VF
0.81
0.9
0.73
Maximum DC Reverse Current
at Rated DC Blocking Voltage 2
IR
-
-
Typical Junction Capacitance 1
CJ 310
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Pulse TestPulse Width = 300 μs, Duty Cycle 2.0%.
http://www.SeCoSGmbH.com/
22-Nov-2013 Rev. B
Max.
0.72
0.93
1.1
-
0.2
20
-
Unit
V
mA
pF
Test Condition
IF = 3A, TJ = 25°C
IF = 10A, TJ = 25°C
IF = 15A, TJ = 25°C
IF = 15 A, TJ = 125°C
TJ=25°C
TJ=100°C
Any changes of specification will not be informed individually.
Page 1 of 2




SeCoS Halbleitertechnologie

SBL30U200F Datasheet Preview

SBL30U200F Datasheet

Voltage 200V 30.0 Amp Low VF Trench Barrier Schottky Rectifier

No Preview Available !

Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
SBL30U200F
Voltage 200V 30.0 Amp
Low VF Trench Barrier Schottky Rectifier
http://www.SeCoSGmbH.com/
22-Nov-2013 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2


Part Number SBL30U200F
Description Voltage 200V 30.0 Amp Low VF Trench Barrier Schottky Rectifier
Maker SeCoS Halbleitertechnologie
Total Page 2 Pages
PDF Download

SBL30U200F Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SBL30U200 Voltage 200V 30.0 Amp Low VF Trench Barrier Schottky Rectifier
SeCoS Halbleitertechnologie
2 SBL30U200F Voltage 200V 30.0 Amp Low VF Trench Barrier Schottky Rectifier
SeCoS Halbleitertechnologie





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy