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SCS40STN - Silicon Epitaxial Planar Schottky Barrier Rectifiers

General Description

Planar Schottky barrier diode with an integrated guard ring for stress protection L C WBFBP-02C

Key Features

  • Low diode capacitance Low forward voltage Guard ring protected High breakdown voltage M B A E F D J H M G K.

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Full PDF Text Transcription (Reference)

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SCS40STN Elektronische Bauelemente 0.12 A, 40 V Silicon Epitaxial Planar Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection L C WBFBP-02C FEATURES ● ● ● ● Low diode capacitance Low forward voltage Guard ring protected High breakdown voltage M B A E F D J H M G K APPLICATION ● ● ●  REF. A B C D E F Millimeter Min. Max. 0.950 1.050 0.550 0.650 0.450 0.550 0.450 REF. 0.400 REF. 0.275 0.325 REF. G H J K L M  Millimeter Min. Max. 0.275 0.325 0.275 0.325 0.275 0.325 0.675 0.725 0.010 0.070 0.010 REF.