SSE4N60

The SSE4N60 is N-Channel Enhancement Mode Power MOSFET designed by SeCoS Halbleitertechnologie.

Product Overview

SeCoS Halbleitertechnologie

Part number	SSE4N60
Manufacturer	SeCoS Halbleitertechnologie
File Size	726.55 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	SSE4N60-SeCoSHalbleitertechnologie.pdf
Additional preview pages of the SSE4N60 datasheet.

The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. M F I H 2 Drain Q Q N 1 2 3 REF. A B C D E F G H Millimeter Min. Max. 10.6 1.58 1.82 1.20 1.45 14.22 16.50 3.50 4.00 2.70 3.30 1.20 1.78 0.50 1.00 REF. I J K L M N Q Millimeter Min. Max. 12.70 14.70 3.60 4.80 1.14 1.40 5.84 6.86 2.03 2.90 0.35 0.64 2.34 2.74 1 Gate 3 Source.

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Published: Aug 12, 2014 |