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SSF1320N - N-channel MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation.

Key Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch Miniature SOT-323 surface mount package saves board space. K 1 E D F G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.1 1.4 0.80 1.10 1.20 1.40 0.15 0.40 H J Millimeter Min. Max. 0.1 REF. 0.525 REF. 0.08 0.25 0.8 TYP. 0.65 TYP. REF. A B C D E F REF. G H J K L.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSF1320N Elektronische Bauelemente 2A , 20V , RDS(ON) 58 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation. A L 3 SOT-323 3 Top View C B 1 2 2 FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch Miniature SOT-323 surface mount package saves board space. K 1 E D F G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.1 1.4 0.80 1.10 1.20 1.40 0.15 0.40 H J Millimeter Min. Max. 0.1 REF. 0.525 REF. 0.08 0.25 0.8 TYP. 0.65 TYP. REF. A B C D E F REF.