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SSI2154 - 800mA 20V Dual N-Channel MOSFET

General Description

The SSI2154 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

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SSI2154 Elektronische Bauelemente 800mA, 20V Dual N-Channel MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SSI2154 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. A SOT-563 B MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage C J D F G H E REF. A B C D E APPLICATION DC-DC converter circuit Load Switch Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 0.05 REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.