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SeCoS Halbleitertechnologie GmbH

2SD2114 Datasheet Preview

2SD2114 Datasheet

NPN Plastic Encapsulated Transistor

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Elektronische Bauelemente
2SD2114
0.5 A, 25 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z High DC current gain :hFE = 1200(Typ)
z High emitter-base voltage. VEBO =12V (Min.)
z Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)
PACKAGE DIMENSIONS
1
Base
3 Collector
2
Emitter
A
L
3
Top View
12
VG
BS
D
K
J
C
H
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
TJ, TSTG
Ratings
25
20
12
500
250
+150, -55 ~ +150
Unit
V
V
V
mA
mW
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*hFE1
VCE(sat)
fT
COB
R(ON)
Min.
25
20
12
-
-
820
-
-
-
-
Typ.
-
-
-
-
-
-
-
350
8
0.8
Max.
-
-
-
0.5
0.5
2700
0.4
-
-
-
CLASSIFICATION OF hFE1
Rank
V
Range
820 - 1800
Marking
BBV
W
1200 - 2700
BBW
Unit
V
V
V
uA
uA
V
MHz
pF
Ω
Test Conditions
IC=10uA
IC=1mA
IE=10uA
VCB=20V
VEB=10V
VCE=3V, IC=10mA
IC=500mA, IB=20mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VIN=0.1V(rms),IB=1mA, f=1KHZ
01-June-2005 Rev. A
Page 1 of 3




SeCoS Halbleitertechnologie GmbH

2SD2114 Datasheet Preview

2SD2114 Datasheet

NPN Plastic Encapsulated Transistor

No Preview Available !

www.DataSheet4U.com
Elektronische Bauelemente
CHARACTERISTIC CURVES
2SD2114
0.5 A, 25 V
NPN Plastic Encapsulated Transistor
01-June-2005 Rev. A
Page 2 of 3


Part Number 2SD2114
Description NPN Plastic Encapsulated Transistor
Maker SeCoS Halbleitertechnologie GmbH
Total Page 3 Pages
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