900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Secos

C1984L Datasheet Preview

C1984L Datasheet

2SC1984L

No Preview Available !

Elektronische Bauelemente
2SC1383L/2SC1384L
www.DataSheet4U.com
NPN Silicon
General Purpose Transistor
FEATURE
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.9±0.2
TO-92L
3 . 9 ±0. 2
Power dissipation
PCM: 1 W (Tamb=25)
Collector current
ICM: 1 A
Collector-base voltage
V(BR)CBO: 2SC1383L: 30 V
2SC1384L: 60 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
1.0±0.1
0.
4
5
+0 . 1
–0.1
0 . 4 0 +–00.. 0055
(1.27 Typ.)
123
1.
4
+0.R2
–0.2
2.54±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
2SC1383L
2SC1384L
2SC1383L
2SC1384L
V(BR)CBO
V(BR)CEO
V(BR)EBO
Test conditions
Ic= 10µA , IE=0
IC=2mA , IB=0
IE= 10µA, IC=0
ICBO VCB=20V , IE=0
hFE(1)
VCE=10 V, IC= 500mA
hFE(2)
VCE=5 V, IC= 1A
VCE(sat)
IC= 500m A, IB=50mA
VBE(sat) IC= 500mA , IB= 50mA
MIN
30
60
25
50
5
85
50
MAX UNIT
V
V
V
0.1 µA
340
0.4 V
1.2 V
Transition frequency
fT
VCE= 10 V, IC= 50mA
100
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
Q
85-170
R
120-240
S
170-340
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3




Secos

C1984L Datasheet Preview

C1984L Datasheet

2SC1984L

No Preview Available !

Elektronische Bauelemente
2SC1383L/2SC1384L
www.DataSheet4U.com
NPN Silicon
General Purpose Transistor
PC Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
1.50
Ta = 25°C
1.25 IB = 10 mA
9 mA
1.00 8 mA
7 mA
6 mA
0.75 5 mA
4 mA
0.50 3 mA
2 mA
0.25
1 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
IC IB
1.2
VCE = 10 V
Ta = 25°C
1.0
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10 12
Base current IB (mA)
VCE(sat) IC
10 IC / IB = 10
1
Ta = 75°C
25°C
0.1 25°C
0.01
0.001
0.01
0.1 1
Collector current IC (A)
10
VBE(sat) IC
100 IC / IB = 10
10
25°C Ta = −25°C
1
75°C
0.1
0.01
0.01
0.1 1
Collector current IC (A)
10
hFE IC
600
VCE = 10 V
500
400
300
Ta = 75°C
200
25°C
25°C
100
0
0.01 0.1
1
Collector current IC (A)
10
200 VCB = 10 V
Ta = 25°C
fT IE
160
120
80
40
0
1 10 100
Emitter current IE (mA)
Cob VCB
50
IE = 0
f = 1 MHz
Ta = 25°C
40
30
20
10
0
1 10 100
Collector-base voltage VCB (V)
VCER RBE
120
IC = 10 mA
Ta = 25°C
100
80
60
2SC1384
40
2SC1383
20
0
0.1 1 10 100
Base-emitter resistance RBE (k)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 3


Part Number C1984L
Description 2SC1984L
Maker Secos
PDF Download

C1984L Datasheet PDF





Similar Datasheet

1 C1984L 2SC1984L
Secos





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy