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Seme LAB

2N2222A Datasheet Preview

2N2222A Datasheet

HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR

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SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
2N2222A
HIGH SPEED
MEDIUM POWER, NPN
SWITCHING TRANSISTOR
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HIGH SPEED SATURATED SWITCHING
• ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
31
2
TO–18 METAL PACKAGE
Underside View
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
75V
VCEO
Collector – Emitter Voltage
40V
VEBO
Emitter – Base Voltage
6V
IC Collector Current
800mA
PD Total Device Dissipation @ TA = 25°C
0.5mW
Derate above 25°C
2.28mW / °C
PD Total Device Dissipation @ TC = 25°C
Derate above 25°C
1.2W
6.85mW / °C
TJ , TSTG Operating and Storage Junction Temperature Range
–65 to +200°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/96




Seme LAB

2N2222A Datasheet Preview

2N2222A Datasheet

HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR

No Preview Available !

SEME
LAB
2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
IBL
VCE(sat)1
VBE(sat)1
hFE
fT
Cob
Cib
hfe
td
tr
ts
tf
OFF CHARACTERISTICS
Collector – Emitter Sustaining Voltage IC = 10mA IB = 0
Collector – Base Breakdown Voltage IC = 10µA
IE = 0
Emitter – Base Breakdown Voltage
IE = 10µA
IC = 0
Collector Cut-off Current
VCE = 60V VEB(off) = 3V
Collector – Base Cut-off Current
IE = 0
VCB = 60V
TA = 150°C
Emitter Cut-off Current (IC = 0)
IC = 0
VEB = 3V
Base Current
VCE = 60V VEB(off) = 3V
ON CHARACTERISTICS
Collector – Emitter Saturation Voltage IC = 150mA
IC = 500mA
IB = 15mA
IB = 50mA
Base – Emitter Saturation Voltage
IC = 150mA
IC = 500mA
IB = 15mA
IC = 50mA
IC = 0.1mA VCE = 10V
IC = 1mA
VCE = 10V
IC = 10mA VCE = 10V
DC Current Gain
TA = –55°C
IC = 150mA VCE = 10V 1
IC = 150mA VCE = 1V 1
IC = 500mA VCE = 10V 1
SMALL SIGNAL CHARACTERISTICS
Transition Frequency 2
IC = 20mA VCE = 20V f = 100MHz
Output Capacitance
VCB = 10V IE = 0
f = 100kHz
Input Capacitance
VEB = 0.5V IC = 0
f = 100kHz
Small Signal Current Gain IC = 1mA
IC = 10mA
VCE = 10V
VCE = 10V
f = 1kHz
f = 1kHz
SWITCHING CHARACTERISTICS
Delay Time
VCC = 30V
VBE(off) = 0.5V
Rise Time
IC = 150mA
IB1 = 15mA
Storage Time
VCC = 30V
IC = 150mA
Fall Time
IB1 = IB2 = 15mA
40
75
6
0.6
35
50
75
35
100
50
40
300
50
75
NOTES:
1) Pulse test: tp 300µs , δ ≤ 2%
2) fT is defined as the frequency at which hFE extrapolates to unity.
Typ.
Max. Unit
V
V
V
10 nA
0.01 µA
10
10 nA
20 nA
0.3
V
1
1.2
V
2
300
MHz
8
pF
25
300
375
10
ns
25
225
ns
60
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/96


Part Number 2N2222A
Description HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR
Maker Seme LAB
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2N2222A Datasheet PDF






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