SEME
LAB
2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
IBL
VCE(sat)1
VBE(sat)1
hFE
fT
Cob
Cib
hfe
td
tr
ts
tf
OFF CHARACTERISTICS
Collector – Emitter Sustaining Voltage IC = 10mA IB = 0
Collector – Base Breakdown Voltage IC = 10µA
IE = 0
Emitter – Base Breakdown Voltage
IE = 10µA
IC = 0
Collector Cut-off Current
VCE = 60V VEB(off) = 3V
Collector – Base Cut-off Current
IE = 0
VCB = 60V
TA = 150°C
Emitter Cut-off Current (IC = 0)
IC = 0
VEB = 3V
Base Current
VCE = 60V VEB(off) = 3V
ON CHARACTERISTICS
Collector – Emitter Saturation Voltage IC = 150mA
IC = 500mA
IB = 15mA
IB = 50mA
Base – Emitter Saturation Voltage
IC = 150mA
IC = 500mA
IB = 15mA
IC = 50mA
IC = 0.1mA VCE = 10V
IC = 1mA
VCE = 10V
IC = 10mA VCE = 10V
DC Current Gain
TA = –55°C
IC = 150mA VCE = 10V 1
IC = 150mA VCE = 1V 1
IC = 500mA VCE = 10V 1
SMALL SIGNAL CHARACTERISTICS
Transition Frequency 2
IC = 20mA VCE = 20V f = 100MHz
Output Capacitance
VCB = 10V IE = 0
f = 100kHz
Input Capacitance
VEB = 0.5V IC = 0
f = 100kHz
Small Signal Current Gain IC = 1mA
IC = 10mA
VCE = 10V
VCE = 10V
f = 1kHz
f = 1kHz
SWITCHING CHARACTERISTICS
Delay Time
VCC = 30V
VBE(off) = 0.5V
Rise Time
IC = 150mA
IB1 = 15mA
Storage Time
VCC = 30V
IC = 150mA
Fall Time
IB1 = IB2 = 15mA
40
75
6
0.6
35
50
75
35
100
50
40
300
50
75
NOTES:
1) Pulse test: tp ≤ 300µs , δ ≤ 2%
2) fT is defined as the frequency at which hFE extrapolates to unity.
Typ.
Max. Unit
V
V
V
10 nA
0.01 µA
10
10 nA
20 nA
0.3
V
1
1.2
V
2
—
300
MHz
8
pF
25
300
—
375
10
ns
25
225
ns
60
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/96
