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Seme LAB

2N2222ACSM Datasheet Preview

2N2222ACSM Datasheet

NPN SWITCHING TRANSISTOR

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SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
2N2222ACSM
HIGH SPEED, MEDIUM POWER, NPN
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
0.51 ± 0.10
(0.02 ± 0.004)
3
0.31
(0.012)
rad.
21
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
0.31
(0.012)
rad.
A = 1.02 ± 0.10
(0.04 ± 0.004)
A
1.40
(0.055)
max.
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N2222A for high reliability /
space applications requiring small size
and low weight devices.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
75V
VCEO
Collector – Emitter Voltage (IB = 0)
40V
VEBO
Emitter – Base Voltage (IB = 0)
6V
IC Collector Current
600mA
PD Total Device Dissipation
350mW
PD Derate above 50°C
2.0mW / °C
Rja Thermal Resistance Junction to Ambient
350°C/W
Tstg,Tj
Storage Temperature,Operating Temp Range
–55 to 200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 3/00




Seme LAB

2N2222ACSM Datasheet Preview

2N2222ACSM Datasheet

NPN SWITCHING TRANSISTOR

No Preview Available !

SEME
LAB
2N2222ACSM
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
VCEO(sus)* Collector Emitter Sustaining Voltage IC = 10mA
40
V(BR)CBO* Collector Base Breakdown Voltage IC = 10mA
75
V(BR)EBO* Emitter Base Breakdown Voltage
IE = 10mA
IC = 0
6
ICEX*
Collector Cut-off Current (IC = 0)
IB = 0
VCE = 60V
ICBO*
Collector Base Cut-off Current
IE = 0
TC = 125°C
VCB = 60V
IEBO*
Emitter Cut-off Current (IC = 0)
IC = 0
VEB = 3V (off)
IBL* Base Current
VCE = 60V VEB = 3V (off)
VCE(sat)*
Collector Emitter Saturation Voltage IC = 150mA
IC = 500mA
IB = 15mA
IB = 50mA
VBE(sat)* Base Emitter Saturation Voltage
IC = 150mA
IC = 500mA
IB = 15mA
IC = 50mA
0.6
IC = 0.1mA VCE = 10V
35
IC = 1mA
VCE = 10V
50
hFE* DC Current Gain
IC = 10mA VCE = 10V
75
TA = 55°C IC = 10mA VCE = 10V
35
IC = 150mA VCE = 10V
100
IC = 150mA VCE = 1V
50
* Pulse test tp = 300ms , d £ 2%
IC = 500mA VCE = 10V
40
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
fT
Transition Frequency
IC = 20mA VCE = 20V f = 100MHz 300
Cob
Output Capacitance
VCB = 10V IE = 0
f = 1.0MHz
Cib Input Capacitance
VBE = 0.5V IC = 0
f = 1.0MHz
hfe
Small Signal Current Gain IC = 1mA
IC = 10mA
VCE = 10V
VCE = 10V
f = 1kHz
f = 1kHz
50
75
Typ.
Typ.
Max.
10
10
10
10
20
0.3
1
1.2
2
Unit
V
V
V
nA
nA
mA
nA
nA
V
V
300
Max.
8
30
300
375
Unit
MHz
pF
pF
SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max. Unit
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
VCC = 30V
VBE = 0.5V (off)
IC1 = 150mA
IB1 = 15mA
VCC = 30V
IC = 150mA
IB1 = IB2 = 15mA
10 ns
25 ns
225 ns
60 ns
fT is defined as the frequency at which hFE extrapolates to unity.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 3/00


Part Number 2N2222ACSM
Description NPN SWITCHING TRANSISTOR
Maker Seme LAB
Total Page 2 Pages
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