2N5742 Datasheet, device equivalent, Seme LAB

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2N5740 - (2N5739 / 2N5740) Silicon PNP Power Transistors (SavantIC)
SavantIC Semiconductor www..com Product Specification Silicon PNP Power Transistors 2N5739 2N5740 DESCRIPTION ·With TO-66 package ·Low .

2N5741 - Bipolar PNP Device (Seme LAB)
2N5741 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP .

2N5743 - Bipolar PNP Device (Seme LAB)
www..com 2N5743 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP .

2N5744 - Bipolar PNP Device (Seme LAB)
2N5744 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar PNP Device in a Herm.

2N5745 - PNP HIGH POWER SILICON TRANSISTOR (Microsemi Corporation)
TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433 Devices 2N4399 2N5745 Qualified Level JANTX JANTXV MAXIMUM RATINGS R.

2N5716 - SILICON LOW NOISE N-CHANNEL JUNCTION FET (ETC)
2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode Junction Field·Effect Transistors designe.

2N5717 - SILICON LOW NOISE N-CHANNEL JUNCTION FET (ETC)
2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode Junction Field·Effect Transistors designe.

2N5718 - SILICON LOW NOISE N-CHANNEL JUNCTION FET (ETC)
2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode Junction Field·Effect Transistors designe.

2N5724 - SCR (Microsemi)
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2N5725 - SCR (Microsemi)
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