Full PDF Text Transcription for 2N6660 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2N6660. For precise diagrams, and layout, please refer to the original PDF.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Sourc...
View more extracted text
hing • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source Voltage 60V VGS Gate – Source Voltage ±20V ID Continuous Drain Current TC = 25°C 1.0A IDM Pulsed Drain Current (1) 3.0A PD Total Power Dissipation at TC ≤ 25°C 5W De-rate TC > 25°C 40mW/°C PD Total Power Dissipation at TA ≤ 25°C 725mW De-rate TA > 25°C 5.
2N6660 Datasheet
