| Part number | 2N6677 |
|---|---|
| Datasheet | 2N6677-SemeLAB.pdf |
| File Size | 10.30 KB |
| Manufacturer | Seme LAB |
| Description | Bipolar NPN Device |
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2N6677 Dimensions in mm (inches). VCEO = 350V IC = 15A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO IC(CONT) hFE ft PD Test Conditions @ 3/15 (VCE / IC) Maximum Working Voltage Min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6677 | NPN POWER TRANSISTORS | GE |
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2N6677 | NPN SILICON POWER TRANSISTOR | Central Semiconductor |
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2N6677 | Silicon NPN Power Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2N6671 | Bipolar NPN Device |
| 2N6672 | Bipolar NPN Device |
| 2N6673 | Bipolar NPN Device |
| 2N6675 | Bipolar NPN Device |
| 2N6676 | Bipolar NPN Device |
| 2N6678 | HIGH VOLTAGE NPN POWER TRANSISTOR |
| 2N6653 | Bipolar NPN Device |
| 2N6654 | Bipolar NPN Device |
| 2N6655 | Bipolar NPN Device |
| 2N6659 | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
