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Seme LAB

2N6800 Datasheet Preview

2N6800 Datasheet

N-CHANNEL POWER MOSFET

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SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
2N6800
N–CHANNEL
POWER MOSFET
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9
(0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
BVDSS
ID
RDS(on)
400V
3.0A
1.0W
5 .0 8 (0 .2 0 0 )
ty p .
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
!
2 .5 4
(0 .1 0 0 )
45°
TO39 – Package
Pin 1 – Source Pin 2 – Gate Pin 3 – Drain
Also available in a low profile version.
FEATURES
• AVALANCHE ENERGY RATED
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current (VGS = 10V , Tcase = 25°C)
3A
ID Continuous Drain Current (VGS = 10V , Tcase = 100°C)
2A
IDM Pulsed Drain Current 1
12A
PD Power Dissipation @ Tcase = 25°C
25W
Linear Derating Factor
0.20W/°C
dv/dt
Peak Diode Recovery 3
4V/ns
TJ , Tstg
RqJC
RqJCA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
–55 to 150°C
5.0°C/W
175°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ VDD = 50V , L ³ 0.100mH , RG = 25W , Peak IL = 1.5A , Starting TJ = 25°C
3) @ ISD £ 1.5A , di/dt £ 50A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 7.5W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
9/00




Seme LAB

2N6800 Datasheet Preview

2N6800 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

SEME
LAB
2N6800
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain to Source
RDS(on) On–State Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 2A
VGS = 10V
VDS = VGS
VDS ³ 15V
ID = 3A
ID = 250mA
IDS = 2A
VDS = 0.8xMax Rating
VGS = 0
TJ = 125°C
VGS = 20V
VGS = –20V
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 3A
VDS = Max Rating x 0.5
VDD = 200V
ID = 3A
VGS = 10V
RG = 7.5W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current
ISM Pulse Source Current 2
VSD Diode Forward Voltage
trr Reverse Recovery TimeReverse
Qrr Recovery Charge
ton Forward Turn–On Time
IS = 3.0A
TJ = 25°C
VGS = 0
IF = 3.0A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
LD Internal Drain Inductance (from centre of drain pad to die)
LS Internal Source Inductance (from centre of source pad to end of source bond wire)
Min. Typ.
400
0.37
2
2
620
200
75
19.1
1
6.7
Negligible
5
15
Max.
1
1.15
4
25
250
100
–100
33
5.8
19.9
30
35
55
35
3
12
1.4
700
6.2
Unit
V
V/°C
W
V
S((WW)
mA
nA
pF
nC
ns
A
V
ns
mC
nH
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
9/00


Part Number 2N6800
Description N-CHANNEL POWER MOSFET
Maker Seme LAB
PDF Download

2N6800 Datasheet PDF






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