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2N6802 Datasheet - Seme LAB

2N6802 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N CHANNEL ENHANCEMENT MODE POWER MOSFET 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. BVDSS ID(cont) RDS(on) 500V 2.5 1.5Ω 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2 13 2.54 (0.100) 45° TO39 Package (TO-205AF) Underside View Pin 1 Source Pin 2 Gate Pin 3 Dra.

2N6802 Features

* AVALANCHE ENERGY RATED

* HERMETICALLY SEALED

* DYNAMIC dv/dt RATING

* SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate

* Source Voltage ±20V ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 2.5A I

2N6802 Datasheet (18.88 KB)

2N6802 Datasheet Preview — Preview of 2N6802 PDF

Datasheet Details

Part number:

2N6802

Manufacturer:

Seme LAB

File Size:

18.88 KB

Description:

N-channel enhancement mode power mosfet.

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2N6802 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Seme LAB

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