2N6802 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Seme LAB

Datasheet Details

Part number	2N6802
Manufacturer	Seme LAB
File Size	18.88 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	2N6802 Datasheet

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2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N–CHANNEL ENHANCEMENT MODE POWER MOSFET 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. BVDSS ID(cont) RDS(on) 500V 2.5 1.5Ω 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2 13 2.54 (0.100) 45° TO39 – Package (TO-205AF) Underside View Pin 1 – Source Pin 2 – Gate Pin 3 – Drain FEATURES • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 2.