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2N6802 Datasheet Preview

2N6802 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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2N6802
IRFF430
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
4.06 (0.16)
4.57 (0.18)
N–CHANNEL ENHANCEMENT
MODE POWER MOSFET
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
BVDSS
ID(cont)
RDS(on)
500V
2.5
1.5
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2
13
2.54
(0.100)
45°
TO39 – Package (TO-205AF)
Underside View
Pin 1 Source Pin 2 Gate
Pin 3 Drain
FEATURES
• AVALANCHE ENERGY RATED
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current (VGS = 10V , Tcase = 25°C)
2.5A
ID Continuous Drain Current (VGS = 10V , Tcase = 100°C)
IDM Pulsed Drain Current 1
1.5A
11A
PD Power Dissipation @ Tcase = 25°C
25W
Linear Derating Factor
0.2W/°C
EAS
dv/dt
Single Pulse Avalanche Energy 2
Peak Diode Recovery 3
0.35mJ
3.5V/ns
TJ , Tstg
RθJC
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
–55 to +150°C
5.0°C/W
175°C/W
Notes
1) Pulse Test: Pulse Width 300µs, δ ≤ 2%
2) @ VDD = 50V , Peak IL = 2.5A , Starting TJ = 25°C
3) @ ISD 2.5A , di/dt 75A/µs , VDD BVDSS , TJ 150°C , SUGGESTED RG = 7.5
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5357
Issue: 1




Seme LAB

2N6802 Datasheet Preview

2N6802 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

2N6802
IRFF430
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain Source Breakdown Voltage
BVDSS Temperature Coefficient of
TJ Breakdown Voltage
Static Drain Source OnState
RDS(on) Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate Source Leakage
Reverse Gate Source Leakage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
VGS = 10V
VDS = VGS
VDS > 15V
VGS = 0
VGS = 20V
VGS = 20V
ID = 1.5A
ID = 2.5A
ID = 250µA
IDS = 1.5A
VDS = 0.8BVDSS
TJ = 125°C
500
2
1.5
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain (Miller) Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
VDS = 0.5BVDS
ID = 2.5A
ID =2.5A
VDS = 0.5BVDS
RG = 7.5
19.8
2.2
5.5
SOURCE – DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current
ISM Pulse Source Current 2
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward TurnOn Time
IS = 2.5A
VGS = 0
IF = 1.5A
TJ = 25°C
IF = 2.5A
TJ = 25°C
di / dt 100A/µs VDD 50V
Typ.
0.43
610
135
65
Negligible
Max.
1.5
1.725
4
25
250
100
100
29.5
4.6
19.7
30
30
55
30
2.5
11
1.4
900
7.0
Unit
V
V/°C
V
S((ΩΩ)
µA
nA
pF
nC
ns
A
V
ns
µC
Notes
1) Pulse Test: Pulse Width 300µs, δ ≤ 2%
2) Repetitive Rating Pulse width limited by maximum junction temperature.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Document Number 5357
Issue: 1


Part Number 2N6802
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Seme LAB
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2N6802 Datasheet PDF






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