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Seme LAB
Seme LAB

BSS76 Datasheet Preview

BSS76 Datasheet

HIGH VOLTAGE PNP SILICON TRANSISTOR

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BSS76 pdf
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P
LAB
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
BSS76
HIGH VOLTAGE
PNP SILICON
TRANSISTOR
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
31
2
TO–18 (TO-206AA) PACKAGE
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
FEATURES
Hermetic Metal Package
Screening Options Available
APPLICATIONS:
All Semelab hermetically sealed prod-
ucts can be processed in accordance
with the requirements of BS, CECC
and JAN specifications
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage
VEBO
Emitter – Base Voltage
IC Continuous Collector Current
PD
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
Total Device Dissipation
TC = 25°C
Derate above 25°C
TJ , TSTG
RθJC
Operating Junction & Storage Temperature Range
Thermal Resistance, Junction – Case
-300V
-300V
-5V
-0.5A
0.5W
2.86mW/°C
2.5W
14.3mW/°C
-65 to 200°C
70°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5747
Issue 1



Seme LAB
Seme LAB

BSS76 Datasheet Preview

BSS76 Datasheet

HIGH VOLTAGE PNP SILICON TRANSISTOR

No Preview Available !

BSS76 pdf
SEME
LAB
BSS76
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Parameter
Test Conditions
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage IC = -10mA
Collector Base Breakdown Voltage IC = -100µA
Emitter Base Breakdown Voltage IE = 100µA
IB = 0
IE = 0
IC = 0
Collector Cut-off Current
VCB = -250V IE = 0
Collector Cut-off Current
VCE = -300V IB = 0
Emitter Cut-off Current
VBE = -5V
IC = 0
ON CHARACTERISTICS
VCE = -1V IC = -1mA
DC Current Gain
VCE = -10V
VCE = -10V
IC = -10mA
IC = -30mA
VCE = -10V IC = -100mA
Collector Emitter Saturation Voltage IC = -10mA
IC = -30mA
IB = -1mA
IB = -3mA
Base Emitter Saturation Voltage
IC = -10mA
IC = -30mA
IB = -1mA
IB = -3mA
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
IC = -20mA
f = 20MHz
VCE = -20V
Min.
-300
-300
-6
30
35
35
50
Cob Output Capacitance
IE = 0
f = 1MHz
VCB = -20V
Cib Input Capacitance
IC = 0
f = 1MHz
VEB = -0.5V
ton TurnOn Time
toff TurnOff Time
* Pulse Test: tp 300µs , d 2%.
IB1 = -10mA
VCC = -100V
IB2 = -10mA
VCC = -100V
IC = -50mA
IC = -50mA
Typ.
45
50
55
40
-0.15
-0.25
110
3.5
45
100
400
Max. Unit
V
-50
-500
-50
nA
150
-0.3
V
-0.4
-0.8
V
-0.9
200 MHz
pF
ns
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5747
Issue 1


Part Number BSS76
Description HIGH VOLTAGE PNP SILICON TRANSISTOR
Maker Seme LAB
Total Page 2 Pages
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