D1209UK
D1209UK is METAL GATE RF SILICON FET manufactured by Seme LAB.
FEATURES
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- VERY LOW Crss
- SIMPLE BIAS CIRCUITS
- LOW NOISE
- HIGH GAIN
- 10 d B MINIMUM
APPLICATIONS
- HF/VHF/UHF MUNICATIONS from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Power Dissipation
100W
BVDSS
Drain
- Source Breakdown Voltage
- 40V
BVGSS
Gate
- Source Breakdown Voltage
- ±20V
ID(sat)
Drain Current
- 10A
Tstg
Storage Temperature
- 65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
- Per Side
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk
Document Number 7164 Issue 1
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min....
