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D1213UK Datasheet Preview

D1213UK Datasheet

METAL GATE RF SILICON FET

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TetraFET

D1213UK

MECHANICAL DATA

DBC1 Package

PIN 1 Source

PIN 5 Source

PIN 2 Drain

PIN 6 Gate

PIN 3 Drain

PIN 7 Gate

PIN 4 Source

PIN 8 Source

DIM mm

Tol. Inches Tol.

A 6.47 0.08 .255 .003

B 0.76 0.08 .030 .003

C 45° 5° 45° 5°

D 0.76 0.08 .030 .003

E 1.14 0.08 .045 .003

F 2.67 0.08 .105 .003

G 11.73 0.13 .462 .005

H 8.43 0.08 .332 .003

I 7.92 0.08 .312 .003

J 0.20 0.02 .008 .001

K 0.64 0.02 .025 .001

L 0.30 0.02 .012 .001

M 3.25 0.08 .128 .003

N 2.11 0.08 .083 .003

O 6.35SQ 0.08 .250SQ .003

P 1.65 0.51 .065 .020

Q 0.13 max .005 max

METAL GATE RF SILICON FET

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

6W – 7.2V – 500MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• LOW Crss

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

PD Power Dissipation

58W

BVDSS

Drain – Source Breakdown Voltage

40V

BVGSS

Gate – Source Breakdown Voltage

±20V

ID(sat)

Drain Current

20A

Tstg Storage Temperature

–65 to 150°C

Tj Maximum Operating Junction Temperature

200°C

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 7/99

Seme LAB

D1213UK Datasheet Preview

D1213UK Datasheet

METAL GATE RF SILICON FET

No Preview Available !

D1213UK

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

Drain–Source

BVDSS Breakdown Voltage

VGS = 0

ID = 100mA

IDSS

Zero Gate Voltage

Drain Current

VDS = 12.5V

VGS = 0

IGSS Gate Leakage Current

VGS(th) Gate Threshold Voltage*

gfs Forward Transconductance*

GPS Common Source Power Gain

η Drain Efficiency

VSWR Load Mismatch Tolerance

VGS = 20V

ID = 10mA

VDS = 10V

PO = 6W

VDS = 7.2V

f = 500MHz

VDS = 0

VDS = VGS

ID = 2A

IDQ = 0.5A

0.5

1.6

20:1

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS = 0

VGS = –5V f = 1MHz

VDS = 12.5V VGS = 0 f = 1MHz

Typ.

Max. Unit

1 mA

1 µA

—

120 pF

80 pF

8 pF

* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%

THERMAL DATA

RTHj–case

Thermal Resistance Junction – Case

Max. 3°C / W

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 7/99

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D1213UK Datasheet Preview

D1213UK Datasheet

METAL GATE RF SILICON FET

D1213UK Datasheet Preview

D1213UK Datasheet

METAL GATE RF SILICON FET

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