• Part: D1231UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 31.02 KB
Download D1231UK Datasheet PDF
Seme LAB
D1231UK
FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - VERY LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 10 d B MINIMUM APPLICATIONS - HF/VHF/UHF MUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Power Dissipation 30W BVDSS Drain - Source Breakdown Voltage 40V BVGSS Gate - Source Breakdown Voltage ±20V ID(sat) Drain Current 10A Tstg Storage Temperature - 65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455)...