Datasheet Summary
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TetraFET
METAL GATE RF SILICON FET
MECHANICAL DATA
4 M
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W
- 50V
- 30MHz SINGLE ENDED
Features
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- LOW Crss
PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE
- SIMPLE BIAS CIRCUITS
- LOW NOISE
DIM mm A 28.83 B 21.97 C 45° D 6.86 E 3.43 Dia. F 5.84 G 13.97 Dia. H 6.60 I 0.13 J 3.81 K 2.54 M 27.94
Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.25 0.13 0.51
Inches 1.135 0.865 45° 0.27 0.135 Dia. 0.230 0.550 Dia. 0.260 0.005 0.15 0.100 1.10
Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001...