DMD1029 fet equivalent, metal gate rf silicon fet.
* SUITABLE FOR BROAD BAND APPLICATIONS
* SIMPLE BIAS CIRCUITS
* ULTRA-LOW THERMAL RESISTANCE
* BeO FREE
* LOW Crss
* HIGH GAIN
– 1.
* SIMPLE BIAS CIRCUITS
* ULTRA-LOW THERMAL RESISTANCE
* BeO FREE
* LOW Crss
* HIGH GAIN
&n.
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