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IRFN250SMD Datasheet Preview

IRFN250SMD Datasheet

N-CHANNEL POWER MOSFET

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IRFN250SMD
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
13
3 .6 0 (0 .1 4 2 )
M ax.
N–CHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
FEATURES
200V
14A
0.100W
2
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
SMD PACKAGE
Pad 1 – Source
Pad 2 – Drain
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
Pad 3 – Gate
• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
Note: IRFxxxSM also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current (VGS = 0 , Tcase = 25°C)
22A
ID Continuous Drain Current (VGS = 0 , Tcase = 100°C)
IDM Pulsed Drain Current 1
14A
88A
PD Power Dissipation @ Tcase = 25°C
100W
Linear Derating Factor
0.8W/°C
EAS
dv/dt
Single Pulse Avalanche Energy 2
Peak Diode Recovery 3
500mJ
5.0V/ns
TJ , Tstg
TL
RqJC
RqJ–PCB
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
–55 to 150°C
300°C
1.25°C/W
3°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ VDD = 50V , L ³ 1.5mH , RG = 25W , Peak IL = 22A , Starting TJ = 25°C
3) @ ISD £ 22A , di/dt £ 190A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 2.35W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00




Seme LAB

IRFN250SMD Datasheet Preview

IRFN250SMD Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

www.DataSheet4U.com
IRFN250SMD
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance 1
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance 1
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
VGS = 0
VGS = 20V
VGS = –20V
ID = 14A
ID = 22A
ID = 250mA
IDS = 14A
VDS = 0.8BVDSS
TJ = 125°C
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 1
Gate – Source Charge 1
Gate – Drain (“Miller”) Charge 1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 22A
VDS = 0.5BVDSS
ID = 22A
VDS = 0.5BVDSS
VDD = 100V
ID = 22A
RG = 2.35W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current
ISM Pulse Source Current 2
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn–On Time
IS = 22A
TJ = 25°C
VGS = 0
IF = 22A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
LD Internal Drain Inductance (from centre of drain pad to die)
LS Internal Source Inductance (from centre of source pad to end of source bond wire)
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Min. Typ. Max. Unit
200 V
0.29 V / °C
0.100
0.105
W
2 4V
9 S((WW)
25 mA
250
100
–100
nA
3500
700
110
pF
55 115 nC
8 22
nC
30 60
35
190
ns
170
130
22
88
1.9
Negligible
950
9.0
A
V
ns
mC
0.8
nH
2.8
Prelim. 7/00


Part Number IRFN250SMD
Description N-CHANNEL POWER MOSFET
Maker Seme LAB
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